Simulation of 20nm N-type SOI multiple-gate MOSFET gate leakage
碩士 === 國立東華大學 === 電機工程學系 === 100 === Many miniature scale device issues come out in recent years because of the scaling down of the devices. We simulated Semiconductor-On-Insulation MOSFET(SOI MOSFET) with the software TCAD for the cost saving study. The simulated device structure is 20nm N-type SOI...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mdr8bu |