| Summary: | 碩士 === 國立東華大學 === 電機工程學系 === 100 === Nowadays, the requirements of the portable multimedia products, such as smart phone and digital camera, expand in the market. Among them, flash memory is generally used at present. However, the flash memory will meet some scaling problems. So, a new type non-volatile memory has attracted much attention in the research institutions. The resistive random access memory (RRAM) with properties of simple structure, high data operate speed, low power consumption, and easily combined in traditional CMOS process has good potential for development.
In this thesis, the first chapter introduces the background of non-volatile memory and the motivation of flexible RRAM. Chapter 2 is a literature review which introduces the basic structure and operating mechanism of RRAM. Chapter 3 illustrates the experimental procedure, electrical measurements after experiment and instrument for material analyses. Chapter 4 is the results and discussion of device tests. Based on the results of devices fabricated in different gas ratios and the results of bending test, we infer a possible resistive switching model. The last chapter summarizes the results and observations of the experiment.
In this study, the ZrO2-based flexible RRAM was deposited by sputtering system. The devices perform different results due to the influence of different fabricating gas ratios and bending test. The device with lesser oxygen ratio shows more uniform switching voltage under bending test, but the retention decreases rapidly. In addition, the effect of bending on the device with higher oxygen ratio is less obvious. The retention of the device can maintain date over 105 seconds after bending, and the devices have good resistive switching characteristics. Based on the research results, the ZrO2-based flexible RRAM possibly can be used in flexible electric device applications.
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