Characteristics of ZrO2-Based Flexible Resistive Switching Memory Fabricated by RF-Magnetron Sputtering

碩士 === 國立東華大學 === 電機工程學系 === 100 === Nowadays, the requirements of the portable multimedia products, such as smart phone and digital camera, expand in the market. Among them, flash memory is generally used at present. However, the flash memory will meet some scaling problems. So, a new type non-...

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Bibliographic Details
Main Authors: Huei-Bo Lin, 林暉博
Other Authors: Chun-Chieh Lin
Format: Others
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/a8rwjv