Investigation of doping on the aluminum induced crystallization of amorphous silicon
碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 100 === In this research, large grain of boron and phosphorus doped polycrystalline silicon (poly-Si) was grown by aluminum induced crystallization (AIC) method. The method has advantages of using cheaper glass substrate, and froming high quality continuous pol...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/54657323626500855366 |