Fabrication and Characterization of Enhancement-mode AlInN/GaN/AlGaN/GaN Metal-Insulator-Semiconductor Field Effect Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 100 === GaN-based power devices are under intensive investigations to replace their silicon counterparts for low switching loss. Currently, the development of normally-off GaN field-effect transistors (FETs) is the mainstream of this research area. In this study, we suc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59410387466342043609 |