The optical emission spectroscopic study of silicon thin film deposited by TE mode Electron Cyclotron Resonance Chemical Vapor Deposition

• Main Authors: Chao Ying, 吳昭穎
• Other Authors: Tomi Li
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/27793648198078695434

碩士 === 國立中央大學 === 能源工程研究所 === 100 === This study utilized Optical Emission Spectroscopy (OES) to diagnose the plasma spectrum by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and tried to find out the relationship with the deposition properties. Under varying process setting , characterization by OES reveals the original intensity of the pivotal radicals spectrum: Si*(288nm), SiH*(414nm), Hβ*(486nm), Hα*(656nm). Moreover, we use the Actinometry technique to compare the species concentration with Ar’s and then analyze the thin film properties and the deposition rate with plasma spectrum. The result showed that power was the major effect of process parameters on plasma density, but not on the electron density. The different species distributions were obtained by controlling the main magnetic field. The Ar spectrum intensity decreased 90% with adding six times the pressure, which revealed that the electron density would decrease continually and the electron temperature tended to decrease seriously from 3mtorr to 5mtorr then at ease by increasing working pressure. Because of the deposition rate decreased followed by increasing the temperature, ECR belonged to mass transfer limited reaction. Since high hydrogen dilution ratio, the crystallization phenomenon was obvious and microcrystalline silicon started from Hα*/SiH* > 6.5. Incidentally, the cyclotron resonance of H+ will have an influence on plasma. Therefore, seeing from the experiments that the amorphous silicon film with CH < 20% and R* <0.13 could be obtained under 45/12/22, 1400W, 5mtorr, 350℃.