The Study of Ultrathin Nickel Alloy Epitaxial Silicides Formation and Thermal Stability
碩士 === 國立中央大學 === 材料科學與工程研究所 === 100 === As the complementary metal-oxide-semiconductor (MOS) transistor device size shrinked, self-aligned silicidation process have been faced with the limitation on the process. Recently, in order to increase MOSFET device performance, conventional metal silicide s...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/74304747519906572625 |