Optimization of the Gate - Drain Capacitance to Improve the Switching Performance of Trench Power Metal-Oxide-Semiconductor Field-Effect Transistors

Optimization of the Gate - Drain Capacitance to Improve the Switching Performance of Trench Power Metal-Oxide-Semiconductor Field-Effect Transistors

碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === Power MOSFETs are widely used as a switching device for high frequency and low voltage (<200 V) power converter. The switching rate depends on charging and discharging performance of the gate capacitor. Low gate - drain charge and low on-resistance ca...

Full description

Bibliographic Details
Main Authors:	Chen, Chi-Fu, 陳淇富
Other Authors:	Pan, Fu-Ming
Format:	Others
Language:	zh-TW
Published:	2012
Online Access:	http://ndltd.ncl.edu.tw/handle/59181487297802687295

Similar Items

Study of Metal Insulator Semiconductor Field Effect Transistor with the Ga2O3 Gate Oxide
by: Wang, Chung-Chi, et al.
Published: (1997)

A Study of Novel Gate and Source/Drain Engineering Methods for Metal-Oxide-Semiconductor Transistors
by: Meng-Fan Wang, et al.
Published: (2002)

Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors
by: Hsi-Wen Liu, et al.
Published: (2018)

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance
by: Yan‐juan Liu, et al.
Published: (2021-02-01)

Asymmetric Gate with Trench Structure for Juntionless Field-Effect Transistor
by: CHEN PING HUA, et al.
Published: (2015)

Advanced trench gated power semiconductor devices
by: Spulber, Oana
Published: (2003)

High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
by: Tse, Koon-Yiu
Published: (2008)

The Design of 60V Double Diffuses Drain Metal Oxide Semiconductor Field Effect Transistor Device
by: Chen, Li-Fan, et al.
Published: (2010)

Radio Frequency Performance of Asymmetric- Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect Transistors
by: Chang, Tsu, et al.
Published: (2010)

Design and Study of the Multi-Split-Gate Metal Oxide Semiconductor Field Effect Transistors
by: PAN, AN-CHING, et al.
Published: (2019)

Optimal Design of Trench Gate Insulted Gate Bipolar Transistor
by: Shih-Hsiang Tai, et al.
Published: (2002)

Analysis of junction capacitance characteristics of trench gate IGBT
by: Wang Bo
Published: (2021-01-01)

Superior Performance of a Negative-capacitance Double-gate Junctionless Field-effect Transistor with Additional Source-drain Doping
by: Z. Zhao, et al.
Published: (2020-11-01)

The Electrical Characteristics of Metal-Oxide-Semiconductor Capacitors and Metal-Oxide-Semiconductor Field Effect Transistors Using High-Dielectric-Constant Thin Film as Gate Dielectric
by: Chiu, Fu-Chien, et al.
Published: (2005)

Study of Trench Junctionless Fin Field-Effect Transistors with Different Gate Structure
by: Lin, Ko Wei, et al.
Published: (2015)

High-K gate oxides for future complementary metal-oxide-semiconductor transistors
by: Liu, Dameng
Published: (2009)

The characteristics of n-channel lateral diffused metal-oxide-semiconductor (LDMOS) field effect transistors with different gate oxide thickness
by: Chi-Chih Chen, et al.
Published: (2004)

Study of Enhancement-Mode GaAs Metal-Oxide-Semiconductor Field-Effect Transistors with High-K Gate Oxides
by: Ho-Cheng Tang, et al.
Published: (2009)

Linearity Analysis of Single and Double-Gate Silicon-On-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor
by: Ma, Wei
Published: (2004)

Study of Tunable Analog Circuits Using Double Gate Metal Oxide Semiconductor Field Effect Transistors
by: Kulkarni, Anish S.
Published: (2009)

Complete Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor Drain Current Model Including Quantum Mechanical Effects
by: Yu-Wei Kao, et al.
Published: (2001)

The Electrical Properties of Zirconium Oxide Thin Films for Metal-Oxide-Semiconductor Field Effect Transistor Gate Dielectric Applications
by: Ming-Tsong Wang, et al.
Published: (2006)

Structure Design of Trench Type Insulated-Gate Bipolar Transistors
by: Li-Feng Liao, et al.
Published: (2014)

Physics, device operation, and circuit application of multi-gate junctionless metal-oxide-semiconductor field-effect-transistors
by: Han, Ming-Hung, et al.
Published: (2013)

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
by: Hyeon-Bhin Jo, et al.
Published: (2018-07-01)

Improvement of Trench Gate MOSFET Gate Oxide Process
by: Hsu, Sheng-Tai, et al.
Published: (2014)

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors
by: Chunsheng Jiang, et al.
Published: (2018-01-01)

Systematic modeling of the metal-oxide-semiconductor field effect transistor
by: Clements, John Lawrence, 1940-
Published: (1965)

Breakdown Voltage of Metal-Oxide-Semiconductor Field-Effect Transistors
by: Huan Jiang, et al.
Published: (2015)

Study of Capacitive Extended Gate Nanobelt Field Effect Transistors as Biosensors
by: Chen, Chih-Wei, et al.
Published: (2018)

Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors
by: Patsy Cadareanu, et al.
Published: (2021-01-01)

Embedded SiGe Source/Drain Induced-Compressive Strain on Low Frequency Noise in 28nm High-K/Metal Gate P-Channel Metal-Oxide-Semiconductor Transistors
by: Kai-Shiang Tsai, et al.
Published: (2014)

Application of Linear Regression to Effective Potential of Double-Gate and Silicon-on Insular Metal-Oxide-Semiconductor Field-Effect Transistors
by: Ching-Lan Chang, et al.
Published: (2006)

Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
by: Atarah, Samuel
Published: (2006)

Development of Cleaning Robot for Trench Drains
by: Kaushik, Adithya
Published: (2019)

Lateral trench-type insulated-gate bipolar transistor triggered by using tunneling-field-effect structure
by: Yang-You Lin, et al.
Published: (2015)

Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
by: K. Takase, et al.
Published: (2017-04-01)

An Investigation on the Electrical Properties of High Dielectric Constant Films for the Application of Gate Dielectric of Metal-Oxide-Semiconductor Field Effect Transistors
by: Chang, Ingram Yin-Ku, et al.
Published: (2009)

Study of InP-Based Enhancement-Mode Metal-Oxide-Semiconductor Field-Effect Transistors with High-K Gate Dielectrics
by: Wei Jen Hsueh, et al.
Published: (2009)

LaAlO3 Gate Dielectric and Strained Silicon Technologies for Metal-Oxide-Semiconductor Field Effect Transistor Applications
by: Yeh, Ling-Yen, et al.
Published: (2010)

Cannot write session to /tmp/vufind_sessions/sess_ukk9enpc8uv4ri1b3stc1q7udd