Optimization of the Gate - Drain Capacitance to Improve the Switching Performance of Trench Power Metal-Oxide-Semiconductor Field-Effect Transistors
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === Power MOSFETs are widely used as a switching device for high frequency and low voltage (<200 V) power converter. The switching rate depends on charging and discharging performance of the gate capacitor. Low gate - drain charge and low on-resistance ca...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59181487297802687295 |