The Root Cause and Improvement of GIDL Breakdown in High Voltage nMOSFETs
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === A gate-induced-drain-leakage-induced OFF-state breakdown is examined in our high-voltage depletion-mode n-channel metal–oxide–semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the OFF-state...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/07630715712518129716 |
| Summary: | 碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === A gate-induced-drain-leakage-induced OFF-state breakdown is examined in our high-voltage depletion-mode n-channel metal–oxide–semiconductor
field-effect transistors.
By increasing the dosage in the n-region, a bell-shaped trend between the OFF-state breakdown voltage VBD and the dosage in the n-region is observed.Such a bell-shaped trend is found to result from two competing factors: an electric field in the gate edge and an electric field associated with the drain–bulk junction. The latter electric field is responsible for the falling part in the bell-shaped trend. Our model can explain the data of the slightly bell-shaped
trend between OFF-state VBD and implant energy in the n-region.
Additionally, the effect of Si recess variation on OFF-state VBD variation can be understood from our model. According to our model, approaches to improve OFF-state VBD and the effect of Si recess variation on VBD variation are proposed.
Base on the thesis results, no mater the improvement of off state breakdown or the impact of process variation all can be controlled in our experiment results.
|
|---|