The Root Cause and Improvement of GIDL Breakdown in High Voltage nMOSFETs
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === A gate-induced-drain-leakage-induced OFF-state breakdown is examined in our high-voltage depletion-mode n-channel metal–oxide–semiconductor field-effect transistors. By increasing the dosage in the n-region, a bell-shaped trend between the OFF-state...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07630715712518129716 |