Development of green material for mask of next generation lithography
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === In this thesis, the environment friendly materials, silicon nitride was used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for attenuating phase-shifting mask (Att-PSM) in lithography. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59790261996414973329 |