Dislocation Improvement and Yield Enhancement for the Process of the Shallow Trench Isolation of High Voltage Semiconductor Devices
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === Shallow Trench Isolation (STI) techniques are essential for semiconductor device for reducing electrical interferences between devices of sub-micro and sub 100-nm High Voltage Complementary Metal-Oxide- Semiconductor. By separating active regions with ox...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91557821370083944779 |