Micro-crystalline silicon thin film transistors and memory devices

碩士 === 國立交通大學 === 光電工程學系 === 100 === In this thesis, high crystallinity and low resistivity of intrinsic and n-type microcrystalline silicon (μc-Si:H) thin films were deposited at 265oC by inductively coupled plasma chemical vapor deposition system (ICPCVD). The high crystallinity of μc-Si:H and th...

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Bibliographic Details
Main Authors: Tu, Cheng-Hui, 凃政暉
Other Authors: Shieh, Jia-Min
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/65667588506075349791