Effect of NH3 flow rate on morphologic and optical properties of InN dots grown by flow-rate modulation epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 100 === In this thesis, we proposed flow-rate modulation epitaxy （FME） to fabricate InN nanostructures. We use FME mode that an alternative supply of group-III and group-V sources to grow InN under 600℃, and growing under low background NH3 flows at 250 sccm during In st...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65401544964054371219 |