Photo-Capacitance of Non-Relaxed InAs Quantum Dots with InGaAs Capping Layer
碩士 === 國立交通大學 === 電子物理系所 === 100 === Electrical and optical properties for relaxation and non-relaxation InAs quantum dots (QDs) with an InGaAs capping layer fabricated by molecular beam epitaxy (MBE) deposition, were studied. First, the properties of quantum states, defect states, and mechanism of...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21424651150596516197 |