The photo-capacitance and photo-current analysis of light-induced excess carriers in GaAsN/GaAs quantum wells
碩士 === 國立交通大學 === 電子物理系所 === 100 === This study investigates the photo-capacitance and photo-current of light-induced excess carriers in GaAsN/GaAs quantum wells. Initially, we establish a escaping model for light-induced excess carriers in GaAsN quantum wells (QWs), and utilize this escaping model...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87664590934604277440 |