Growth and physical properties of group III-nitrides on Si substrates
博士 === 國立交通大學 === 電子物理系所 === 100 === In this dissertation, the growth of GaN nano-rods, InN nano-rods, In-polar and N-polar InN films on Si(111) substrate by molecular beam epitaxy (MBE) were studied. The x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering were used to investigate t...
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| Format: | Others |
| Language: | en_US |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72611374548505916389 |