Investigation of Interface Effect on Resistive Switching Properties of Binary Metal Oxide Memory Devices
博士 === 國立交通大學 === 電子研究所 === 100 === With the arrival of the Digital Age, nonvolatile memory (NVM) plays an important role for portable electronic products, such as the mobile phone, digital camera, and notebook computer. Flash memory is the mainstream among the nonvolatile memory devices nowadays, b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37464986353000370272 |