Fabrication and Analysis of Independent Double-Gated Poly-Si Nanowire Thin-Film Transistors
博士 === 國立交通大學 === 電子研究所 === 100 === A simple and low-cost method of fabricating poly-Si nanowire (NW) devices is proposed in this dissertation. The feature lies in turning off the bias power in an inductively coupled plasma etcher combined with the addition of SF6 gas to obtain an isotropic etching...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50445813346177710050 |