Accurate Modeling of Gate Electron Tunneling Current in Metal-Gate/High-K nMOSFET and nFinFET
碩士 === 國立交通大學 === 電子研究所 === 100 === High-K stacks can suppress the gate leakage current while a FinFET structure has benefits of improving the short channel effects. Gate tunneling current model has been established based on WKB approximation. In this thesis, an electron tunneling model through hi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76989620165986964020 |