The Research of Ge Grown on Si by Using Two-step SixGe1-x Buffer Layers
碩士 === 國立交通大學 === 照明與能源光電研究所 === 100 === According to Moore’s law, the device is scaling down below 100 nm, the performance of Si device is reaching its limitation. In the same time, the outstanding features of III-V material have attracted a lot of attention like higher electron mobility than Si an...
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| Format: | Others |
| Language: | en_US |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26676725728664879167 |