Electric Characteristics and Application of (Nickel, Titanium and Tungsten) Oxides on Resistive Random Access Memory (RRAM)
博士 === 國立交通大學 === 材料科學與工程學系 === 100 === Due to the fact that traditional nonvolatile memory (Flash memory) with polycrystalline floating-gate structure will face the physical limitation below 20nm technology node, some emerging non-volatile memories such as magnetic random access memory (MRAM), phas...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93028949378382778824 |