Electroless Deposition of Composite Ruthenium and Ruthenium Dioxide Thin Films on Conductors, Semiconductors, and Insulators

• Main Authors: Huang, Shiau-Lin, 黃筱琳
• Other Authors: Lin, Pang
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/39104380878238892081

碩士 === 國立交通大學 === 材料科學與工程學系 === 100 === In this study, we explore the electroless deposition of composite Ru/RuO2 film on a variety of substrates including conductor (copper), semiconductor (silicon), as well as insulator (acrylonitril butadiene styrene and silicon dioxide). Due to their distinct surface natures, these substrates undergo different pretreatments to facilitate nucleation and growth of Ru from the plating bath. Except for silicon dioxide, we are able to form composite Ru/RuO2 films with various surface morphologies, deposition rates, and atomic ratio of Ru/RuO2. For the Cu substrate, we successfully deposit 40-450 nm composite Ru/RuO2 films without and with surface activation treatments. For the Si substrate, we demonstrate the formation of 35-105 nm films without and with surface activation treatment, as well as sensitization and activation treatment. For the substrate of acrylonitril butadiene styrene, the composite can be prepared only after sensitization and activation treatment. XPS analysis on the composite films indicates a composition in the range of 72-99.4 % Ru and 0.6-28 % RuO2. Failure to produce a deposit on the silicon dioxide substrate is caused by the excess alkalinity of the plating bath that renders a faster corrosion rate of silicon dioxide as compared to the formation rate of Ru composite films.