Analysis of Through-Silicon Via Thermal Stresses Induced Mobility Change in Silicon Inversion Layer
碩士 === 國立成功大學 === 機械工程學系碩博士班 === 100 === Three-dimensional (3D) integration using through-silicon via (TSV) has emerged as one of the primary technologies for increasing device density and developing system-in-package solutions. A critical concern for TSV is the thermal stress developed in the 3D st...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05083205295854894402 |