Silicon Wafer Level Package Technique for High Power Light-Emitting Diodes
碩士 === 國立成功大學 === 電機工程學系專班 === 100 === In the study, the design of the cavity is according to three parameters. There are open size、 depth and angle, when the opening larger has a lower luminous flux, the depth deeper has a higher luminous flux but the angle is smaller, and the angle greater has a l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72835991625211433809 |