The Doping Level of Graphene on Metal-coated SiOx Substrate: Its Raman Spectroscopy and Synchrotron Radiation Photoelectron Spectroscopy Study
碩士 === 國立成功大學 === 物理學系碩博士班 === 100 === To develop novel graphene-based device, the carrier concentration of graphene has been studied widely recently. Through those researches, the doping level of graphene can be modulated by atom replacement, which may cause the 2-D structure damage or Electric Fie...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38052734910400663721 |