Growth and characterization of cobalt silicide nanowires

• Main Authors: Chi-MingLu, 盧祈鳴
• Other Authors: Kuo-Chang Lu
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/55085049118017798513

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 100 === In this work, cobalt silicide nanowires were synthesized by CVD processes on Si(100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si(100) substrates, the gas flow rate and the pressure of the reaction were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single crystal CoSi nanowires were grown on 850~880℃ substrates at a lower gas flow rate, while single crystal Co2Si nanowires were grown on 880~900℃ substrates. The crystal structure and growth direction were identified and the surface oxide was discussed as well. Due to the reduced coordination of the surface cobalt atoms, CoSi nanowires grown here were found to be ferromagnetic, which is different from its behavior in bulk. Also, field emission measurements show that the CoSi nanowires were good field emission materials.