Growth and characterization of cobalt silicide nanowires

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 100 === In this work, cobalt silicide nanowires were synthesized by CVD processes on Si(100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si(100) substrates, the gas flow rate and the pressure...

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Bibliographic Details
Main Authors: Chi-MingLu, 盧祈鳴
Other Authors: Kuo-Chang Lu
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/55085049118017798513