Investigation of nano-structured TaN metal gate thin films using reactive sputtering

• Main Authors: Heng-YuChou, 周恆宇
• Other Authors: Kao-Shuo Chang
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/95485425931436446257

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 100 === In this research, TaN is used as a metal gate due to its excellent conductivity, thermal stability, and tunable work function. A reactive magnetron sputtering system is used to deposit TaN thin films with various deposition parameters, such as the working pressures and deposition powers. The film thickness is measured by a profilometer. The sheet resistance is characterized by a four-point probe. The surface morphology and structures are characterized by scanning electron microscopy and X-ray diffraction, respectively. The electrical results are characterized by a probe station equipped with a LCR meter. The effects of different working pressures and working powers on sheet resistance, deposition rate, crystallinity, grain size, particle size and work functions are investigated in this research. We found the TaN thin films made at higher working power (〉 85W) and lower deposition pressures (〈 7 mTorr) are with reasonable good conductivity and nanocrystallinity. The work function of TaN made at 100W and 5 mTorr is 5.07 eV which is promising for P-MOS application.