Subband Structures and Transport Properties of Strained Si1-xGex Alloy Channel MOSFET
博士 === 國立中興大學 === 物理學系所 === 100 === Valence subband properties and hole effective masses of MOS inversion layer in strained Si1-xGex alloys channel on (001), (110), and (111) Si substrates are studied theoretically based on the Luttinger-Kohn Hamiltonian. The subband structures under investigation a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07565002612827423594 |