Nitride-based optoelectronics with high light extracted heterostructures

碩士 === 國立中興大學 === 材料科學與工程學系所 === 100 === In this thesis, the surface of the InGaN-based light-emitting diodes (LEDs) were roughened by Li/Al LDH hetero-materials, and we embedded AZO micro-pillar structures in epitaxial layers as well. The electrical properties and the epitaxial quality of the d...

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Bibliographic Details
Main Authors: Peng-Han Tsai, 蔡鵬翰
Other Authors: 林佳鋒
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/48620411653078291512