Stress Analysis and Carrier Mobility Calculation of InGaAs MOSFETs

• Main Authors: Hsiang Ou-Yang, 歐陽湘
• Other Authors: 張書通
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/64188341269041010788

碩士 === 國立中興大學 === 光電工程研究所 === 100 === 　 III-V materials will be the potential candidates to replace Si in the future CMOS technology. Recently, the strained InGaAs n-MOSFET with S/D Stressors was demonstrated for the first time. In this thesis, we will study the performance of strained InGaAs MOSFETs with S/D Stressor using stress simulation and mobility calculation. This thesis is organized as following: First, we will briefly introduce the overview of III-V materials and transistors in Chapter 1. Electron mobility calculation for InGaAs MOSFET will be given in Chapter 2. Stress simulations for n-MOSFET and p-MOSFET are studied in Chapter 3. In Chapter 4, we propose a new analytical model for channel stress in InGaAs MOSFET with S/D Stressors. Finally, the summary will be concluded in Chapter 5.