Stress Analysis and Carrier Mobility Calculation of InGaAs MOSFETs
碩士 === 國立中興大學 === 光電工程研究所 === 100 === III-V materials will be the potential candidates to replace Si in the future CMOS technology. Recently, the strained InGaAs n-MOSFET with S/D Stressors was demonstrated for the first time. In this thesis, we will study the performance of strained InGaAs MOSF...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64188341269041010788 |
| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 100 === III-V materials will be the potential candidates to replace Si in the future CMOS technology. Recently, the strained InGaAs n-MOSFET with S/D Stressors was demonstrated for the first time. In this thesis, we will study the performance of strained InGaAs MOSFETs with S/D Stressor using stress simulation and mobility calculation. This thesis is organized as following: First, we will briefly introduce the overview of III-V materials and transistors in Chapter 1. Electron mobility calculation for InGaAs MOSFET will be given in Chapter 2. Stress simulations for n-MOSFET and p-MOSFET are studied in Chapter 3. In Chapter 4, we propose a new analytical model for channel stress in InGaAs MOSFET with S/D Stressors. Finally, the summary will be concluded in Chapter 5.
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