| Summary: | 碩士 === 明志科技大學 === 材料工程研究所 === 100 === In this study, epitaxial growth of TiN film on Si(100) and Si(111) substrates by DC magnetron sputtering, we controlled the substrate temperature, sputtering power and holder height in the same film thickness to research the influence of epitaxial thin films. The XRD results show that the TiN films are preferential growth, and the cross-sectional microstructure by Transmission electron microscopy shows diffraction pattern and high resolution TEM in TiN films.
The results showed, in the various parameter on Si(100) and Si(111) had different trend, that only higher temperature has the same result.
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