Investigation on Source/Drain Electrodes of Amorphous Aluminum Zinc Tin Oxide Thin Film Transistors
碩士 === 明新科技大學 === 電子工程研究所 === 100 === In this research, we used Inverted Staggered type TFTs, which two different SnO2 targets with 25-nm-thick a-AZTO as channel layers deposited by radio frequency sputtering (RF sputtering) at room temperature. The transmission line method (TLM) was used to evaluat...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94277922791959316672 |