Study on The Properties of (100) Oriented ZnO Piezoelectric Thin Film and Double Layer Bulk Acoustic Wave Resonator

• Main Authors: Jyun-Jie Tseng, 曾俊傑
• Other Authors: Maw-Shung Lee
• Format: Others
• Language: zh-TW
• Published: 101
• Online Access: http://ndltd.ncl.edu.tw/handle/69318351064928783154

碩士 === 國立高雄應用科技大學 === 電子工程系 === 100 === In this study, we deposited (100)-oriented ZnO and (100)-oriented AlN film by reactive RF magnetron sputtering method, also apply two films to fabricate thin film bulk acoustic resonator (FBAR). The FBAR structure was the metal electrode / ZnO piezoelectric layer / AlN piezoelectric layer / metal electrode / silicon nitride / silicon dioxide. Finally, the optimal sputtering parameters for (100)-oriented ZnO films were found to be RF power of 200W, sputtering pressure of 11.5 mTorr , substrate temperature of 150 oC, oxygen concentration of 20% , and thw (100)-oriented AlN films were found to be RF power of 300W, sputtering pressure of 9 mTorr, substrate temperature of 150 oC, nitrogen concentration of 40%. The resonant frequency of FBAR device was measured as 2.66GHz, near the COMSOL simulation of 2.701GHz.