Analysis of the characteristics of AlGaN/ GaN HEMT
碩士 === 國立高雄應用科技大學 === 電子工程系 === 100 === In recent years, the demand of high-frequency high-power devices has gradually increased. The compound semiconductor of GaN with high electron saturation velocity, good thermal stability, high breakdown voltage has widely used in the fabrication of high-freque...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/48119045546655849976 |