Dependence of Annealing Temperature and Annealing Pressure in Low Pressure Hydrogen / Nitrogen Annealing on Electrical,Optical and Microstructure Properties of Gallium and Aluminum co-doped Zinc Oxide Films
碩士 === 崑山科技大學 === 電機工程研究所 === 100 === This work descirbes the electrical and optical properties of gallium and aluminum doped zinc oxide (GAZO) films with unheated substrate during sputtering can be improved by low pressure hydrogen/nitrogen or pure hydrogen annealing or not. The results indicate bo...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35112731122431610584 |