Numerical Simulation And Analysis Of Conventional And MOS HEMTs
碩士 === 義守大學 === 電子工程學系 === 100 === The direct current characteristics of conventional high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOS HEMTs) are simulated and analyzed in this thesis. In equilibrium, the energy levels, two dimensional el...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41536595603666402583 |
| Summary: | 碩士 === 義守大學 === 電子工程學系 === 100 === The direct current characteristics of conventional high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOS HEMTs) are simulated and analyzed in this thesis. In equilibrium, the energy levels, two dimensional electron gas(2DEG) and Fermi level are calculated by using the Newton method. When the gate voltages are applied, the corresponding 2DEG concentrations are calculated by using the charge-control model. Then the one-dimensional Poisson equation is simulated by the finite-difference method. Compare the characteristics of gate leakage current and break-down voltage between conventional HEMTs and MOS HEMTs. The simulation results show that the gate leakage current is reduced and the break-down voltage is increased for the MOS HEMTs.
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