Numerical Simulation And Analysis Of Conventional And MOS HEMTs
碩士 === 義守大學 === 電子工程學系 === 100 === The direct current characteristics of conventional high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOS HEMTs) are simulated and analyzed in this thesis. In equilibrium, the energy levels, two dimensional el...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41536595603666402583 |