| Summary: | 碩士 === 輔仁大學 === 物理學系 === 100 === Silicon thin film of solar cell is usually fabricated by plasma-enhance chemical vapor deposition (PECVD). The PECVD process is a high facility cost. And, the toxic gases, such as silane (SiH4), must be used in the fabrication process. The silicon film is also able to be fabricated by physical vapor deposition (PVD) process, such as reactive magnetron sputtering in hydrogen ambience. The process is a safe and cheap method for fabricating a hydrogenated silicon film without using any toxic gas.
In this study, we added an end-Hall ion source for ion-assisted position in the RF magnetron sputtering to increase the activity of the hydrogen ion and to decrease the substrate temperature. The grain sizes, crystal volume fractions and structure of the μc-Si:H thin films, which deposited with different hydrogen partial pressures, substrate temperature and ion-beam assisted processes, were analyzed by XRD, Raman spectroscopy, FTIR, AFM and UV-Vis spectrophotometer.
The results showed that the Si films are crystallized at hydrogen partial pressure ratio, R(H), above 55 %. The grain size and crystal volume fractions were the largest when the films was prepared at R(H) = 65 %. The silicon film was an amorphous below R(H)=50 %. Yet, the film became a hydrogenated crystalline film when adding an ion-assisted deposition in the RF sputtering process. The grain size and crystal volume fraction of the Si film were also increased with the substrate temperature increasing.
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