| Summary: | 碩士 === 逢甲大學 === 電子工程所 === 100 === Resistive Random Access Memory (RRAM) has been widely investigated for the next generation nonvolatile memories due to their superior characteristics including low operation voltage, high operation speed, simple structure, low power consumption and compatibility with standard CMOS process.In this study, we proposed an ion bombardment technique for fabricating SiO2:Cu switching layer. By using this ion bombardment technique on the copper thin film, parts of the copper atoms can be embedded in SiO2 directly.
After CMP process removed redundant copper thin film, TaN was immediately deposited as top electrode by metal mask to complete a TaN/SiO2:Cu/TaN ReRAM with limited copper source. The TaN/SiO2:Cu/TaN memory shows excellent bipolar resistive switching behaviors, such as good endurance (>100 cycles), and high ON/OFF ratio(10^5). Through the temperature-dependent resistivity, it is shown the high/low switching characteristics are dominated by formation and capture of copper filament. High performance SiO2-base ReRAM was fabricated successfully by a novel ion-bombardment technique.
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