Electrical properties of ion-bombarded SiO2:Cu switching layer for ECM-type ReRAM application
碩士 === 逢甲大學 === 電子工程所 === 100 === Resistive Random Access Memory (RRAM) has been widely investigated for the next generation nonvolatile memories due to their superior characteristics including low operation voltage, high operation speed, simple structure, low power consumption and compatibility wit...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43503543082313288863 |