Influence of Ag doping condition on switching properties for sol-gel derived SiO2: Ag switching layer
碩士 === 逢甲大學 === 電子工程所 === 100 === Recently, with the progress of science and technology, non-volatile memory''s demand quantity has not only increased but also its high efficiency becomes a requirement. At present, due to semiconductor technology advancement, device size is shrank...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70567293410053762840 |