Fabrication and Characterization Study of AlN Metal-Semiconductor-Metal DUV Detectors in Vacuum.
碩士 === 中原大學 === 電子工程研究所 === 100 === In this thesis, 4000 Å thick AlN thin film was grown on c-sapphire by Helicon sputtering system at 450℃, and was employed to fabricate the AlN metal-semiconductor-metal (MSM) photodetectors. The electrical properties of the devices were measured in the atmosphere...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90345834737383658700 |