Physical and electrical properties of high-k Yb2O3、Tm2O3 gate dielectric layer for amorphous-InGaZnO TFTs application
碩士 === 長庚大學 === 電子工程學系 === 100 === In this work, we used TaN as gate electrode. The α-IGZO thin film transistors with Tm2O3 、 Yb2O3 and YbTiO gate dielectric were deposited by sputter system, and the α-IGZO as active layer. Finally, the aluminum as source and drain were deposited by thermal evaporat...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63996436762403083469 |