Process optimization on NMOSFET and N-type Sense Amplifier for DRAM Technology
碩士 === 長庚大學 === 電子工程學系 === 100 === As the dimension of device size keep shrinking in deep submicron integrated circuit technology, the increase on density of electron devices need to be optimized with the electric circuit transmission speed and the power consumption. In DRAM operation, small driving...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71532323249489411084 |