The Study of High-k ZrO2 and Ti-doped Nb2O5 Charge Trapping Layers for Nonvolatile Memory Application
碩士 === 長庚大學 === 電子工程學系 === 100 === Recently, the MOHOS-type nonvolatile memory with high-k charge trapping layer was used to replace conventional floating gate memory due to high trap density, thermal stability, large conduction band offset and equivalent oxide thickness (EOT). In this thesis, the h...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/74132815863754367339 |