Germanium based nanoscale resistive switching memories
博士 === 長庚大學 === 電子工程學系 === 100 === In this study, conductive bridging random access memory (CBRAM) devices using different GexSe1-x (x=0.2–0.5) solid–electrolytes in an Al/Cu/GexSe1-x/W structure have been investigated. All deposited materials, via filling, and crossbar structure are studied by HRTE...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97941512369369227926 |